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Same model may have multiple batches, images only for reference.
IRFR130A Real Image
Same model may have multiple batches, images only for reference.

IRFR130A

Part No IRFR130A
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 13A DPAK
Datasheet
IRFR130A Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 36nC @ 10V
Max Input Capacitance 790pF @ 25V
Power Dissipation (Max) 2.5W (Ta), 41W (Tc)
Maximum Rds On at Id,Vgs 110 mOhm @ 6.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 069528-IRFR130A
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR130A CAD Model

Description

The Fairchild/ON Semiconductor IRFR130A is an N-channel MOSFET with a drain-source breakdown voltage of 100V and a continuous drain current at 25°C of 13A (Tc).

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 13A (Tc) @ 25°C
  • Package: D-Pak
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Power Dissipation: 2.5W (Ta), 41W (Tc)
  • Supply and Demand Status: balanced

This component is used in various electronic applications and is a popular choice due to its medium popularity, balanced supply and demand status. However, it has been declared obsolete (EOL).

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