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IRFR220BTM

Part No IRFR220BTM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 4.6A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 390pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 40W (Tc)
Maximum Rds On at Id,Vgs 800 mOhm @ 2.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 069530-IRFR220BTM
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFR220BTM CAD Model

Description

The IRFR220BTM is an obsolete (EOL) N-channel MOSFET manufactured by Fairchild/ON Semiconductor.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 4.6A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 16nC @ 10V
  • Maximum Rds On: 800 mOhm @ 2.3A, 10V
  • Max Input Capacitance: 390pF @ 25V
  • Package: D-Pak
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
220+ $0.2667 $58.6740
530+ $0.2189 $116.0170
820+ $0.2121 $173.9220
1,130+ $0.2053 $231.9890
1,460+ $0.1984 $289.6640
1,950+ $0.1779 $346.9050
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 500 pieces
MOQ: 220 pcs
Order Increment : 1 pcs
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