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Same model may have multiple batches, images only for reference.
IRFR230BTM Real Image
Same model may have multiple batches, images only for reference.

IRFR230BTM

Part No IRFR230BTM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 7.5A DPAK
Datasheet
IRFR230BTM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 720pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 50W (Tc)
Maximum Rds On at Id,Vgs 400 mOhm @ 3.75A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 160721-IRFR230BTM
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR230BTM CAD Model

Description

The Fairchild/ON Semiconductor 160721-IRFR230BTM is an N-Channel MOSFET with a drain-source breakdown voltage of 200V and a continuous drain current of 7.5A @ 25°C.

  • Maximum Rds On: 400 mOhm @ 3.75A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Gate Charge: 29nC @ 10V
  • Input Capacitance: 720pF @ 25V
  • Package: D-Pak
  • Dimensions: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Power Dissipation: 2.5W (Ta), 50W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
290+ $0.2021 $58.6090
695+ $0.1663 $115.5785
1,080+ $0.1605 $173.3400
1,485+ $0.1559 $231.5115
1,925+ $0.1502 $289.1350
2,565+ $0.1351 $346.5315
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Availability: 17,500 pieces
MOQ: 290 pcs
Order Increment : 1 pcs
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