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Same model may have multiple batches, images only for reference.
IRFS520A Real Image
Same model may have multiple batches, images only for reference.

IRFS520A

Part No IRFS520A
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 7.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 480 pF @ 25 V
Power Dissipation (Max) 28W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F
Package / Case TO-220-3 Full Pack
Standard Package 640 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 605327-IRFS520A
Ultra Librarian 3D Model Ultra Librarian IRFS520A CAD Model

Description

The IRFS520A is an N-Channel MOSFET transistor designed for applications in discrete semiconductor products.

  • Drain-to-Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id) @ 25°C: 7.2A
  • Rds On (Max) @ 3.6A and 10V: 200mOhm
  • Gate Charge (Qg) @ 10V: 22nC
  • Maximum Operating Temperature: -55°C to 175°C
  • Package: TO-220-3 Full Pack
  • Overall: The IRFS520A is a reliable and efficient MOSFET transistor for various applications.

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