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Same model may have multiple batches, images only for reference.
IRFU214BTU Real Image
Same model may have multiple batches, images only for reference.

IRFU214BTU

Part No IRFU214BTU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 2.2A IPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 10.5nC @ 10V
Max Input Capacitance 275pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Maximum Rds On at Id,Vgs 2 Ohm @ 1.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 069603-IRFU214BTU
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFU214BTU CAD Model

Description

The Fairchild/ON Semiconductor IRFU214BTU is a MOSFET transistor that offers reliable performance and high power dissipation capabilities.

  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 250V
  • Maximum Continuous Drain Current: 2.2A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 10.5nC @ 10V
  • Maximum Input Capacitance: 275pF @ 25V
  • Maximum Rds On: 2 Ohm @ 1.1A and 10V
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Mounting: Through-hole
  • Supply and Demand Status: Balanced

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