The IRFW520ATM is a single N-channel MOSFET designed for high-performance power management applications. With a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 9.2A, this MOSFET offers efficient power handling capabilities. The Rds On (Max) is 200mOhm @ 4.6A and 10V gate-to-source voltage (Vgs), ensuring low power dissipation and high efficiency. The IRFW520ATM features a gate charge (Qg) of 22nC @ 10V and an input capacitance (Ciss) of 480pF @ 25V, allowing for fast switching and high-speed performance. This MOSFET is housed in a TO-263-3, D²Pak package, making it suitable for surface mount applications. With a temperature range of -55°C to 175°C, the IRFW520ATM can operate in a wide range of environments. It is an active product from Fairchild/ON Semiconductor, offering reliable and efficient power management solutions.