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IRFW540ATM

Part No IRFW540ATM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 28A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 78nC @ 10V
Max Input Capacitance 1710pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 107W (Tc)
Maximum Rds On at Id,Vgs 52 mOhm @ 14A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 040764-IRFW540ATM
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFW540ATM CAD Model

Description

The Fairchild/ON Semiconductor IRFW540ATM is an N-Channel MOSFET with a drain-source breakdown voltage of 100V and a continuous drain current of 28A @ 25°C. It has a maximum Rds On of 52 mOhm @ 14A and 10V. The MOSFET has a maximum input capacitance of 1710pF @ 25V and a maximum gate-source voltage of ±20V. It operates @ a temperature range of -55°C to 175°C and has a power dissipation of 3.8W (Ta) and 107W (Tc). The package type is D2PAK (TO-263AB) and the mounting is SMD (SMT). This MOSFET is suitable for use in high voltage and high current applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.3112 $50.8464
53+ $1.8963 $100.5039
82+ $1.8371 $150.6422
113+ $1.7778 $200.8914
146+ $1.7186 $250.9156
195+ $1.5408 $300.4560
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Availability: 1,000 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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