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Same model may have multiple batches, images only for reference.
ISL9N308AP3 Real Image
Same model may have multiple batches, images only for reference.

ISL9N308AP3

Part No ISL9N308AP3
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Series UltraFET®
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8Ohm @ 75A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 15 V
Power Dissipation (Max) 100W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 607867-ISL9N308AP3
Ultra Librarian 3D Model Ultra Librarian ISL9N308AP3 CAD Model

Description

The 607867-ISL9N308AP3 is a single N-channel MOSFET transistor.

  • Series: UltraFET®
  • Application: Discrete Semiconductor
  • Drain-to-Source Voltage: 30V
  • Continuous Drain Current: 75A @ 25°C
  • Maximum On-Resistance: 8Ω @ 75A and 10V gate-source voltage
  • Maximum Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Power Dissipation: 100W @ 175°C
  • Package: TO-220-3
  • Mounting Type: Through-Hole
  • Gate Charge: 68nC @ 10V gate-source voltage
  • Input Capacitance: 2600pF @ 15V drain-source voltage
  • Maximum Gate-Source Voltage: ±20V
  • Operating Temperature Range: -55°C to 175°C
  • Status: Obsolete
  • Manufacturer: Fairchild/ON Semiconductor

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