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Same model may have multiple batches, images only for reference.
SI1032X-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1032X-T1-GE3

Part No SI1032X-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 200MA SC89-3
Datasheet
SI1032X-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 0.75nC @ 4.5V
Maximum Gate-Source Voltage ±6V
Power Dissipation (Max) 300mW (Ta)
Maximum Rds On at Id,Vgs 5 Ohm @ 200mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-89-3
Dimension SC-89, SOT-490
Win Source Part Number 098238-SI1032X-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI1032X-T1-GE3 CAD Model

Description

The Vishay SI1032X-T1-GE3 is a MOSFET electronic component suitable for various applications in electronic circuits.

  • Manufacturer: Vishay
  • Product Name: SI1032X-T1-GE3
  • Maximum Power Dissipation: 300mW (Ta)
  • Drain-Source Breakdown Voltage: 20V
  • Supply and Demand Status: Sufficient
  • Packaging: Reel-TR
  • Mounting Technology: SMD (SMT)

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Pricing & Ordering

Quantity Unit Price Ext. Price
200+ $0.2524 $50.4800
425+ $0.2365 $100.5125
660+ $0.2285 $150.8100
945+ $0.2125 $200.8125
1,225+ $0.2045 $250.5125
1,530+ $0.1965 $300.6450
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,490 pieces
MOQ: 200 pcs
Order Increment : 1 pcs
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