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Same model may have multiple batches, images only for reference.
ISL9V2540S3ST Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

ISL9V2540S3ST

Part No ISL9V2540S3ST
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 430V 15.5A 166.7W D2PAK
Datasheet
ISL9V2540S3ST Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 430V
Maximum Current Collector 15.5A
Collector-emitter saturation voltage(Max) 1.8V @ 4V, 6A
Maximum Power Dissipation 166.7W
Input Type Logic
Gate Charge 15.1nC
Turn-on and Turn-off delay time -/3.64μs
Testing Conditions 300V, 1 kOhm, 5V
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263AB
Win Source Part Number 1049041-ISL9V2540S3ST
Popularity Medium
Supply and Demand Status Balance
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian ISL9V2540S3ST CAD Model

Description

The ISL9V2540S3ST is an IGBT transistor manufactured by Fairchild/ON Semiconductor.

  • Maximum Collector-Emitter Breakdown Voltage: 430V
  • Maximum Power Dissipation: 166.7W
  • Gate Charge: 15.1nC
  • Collector-Emitter Saturation Voltage (Max): 1.8V @ 4V and 6A
  • Case/Package: TO-263AB
  • Maximum Collector Current: 15.5A

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