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Same model may have multiple batches, images only for reference.
MJE200TSTU Real Image
Same model may have multiple batches, images only for reference.

MJE200TSTU

Part No MJE200TSTU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 25V 5A TO-126
Datasheet
MJE200TSTU Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Transistor Polarity NPN
Maximum Current Collector 5A
VCEO Maximum Collector-Emitter Breakdown Voltage 25V
Max Vce (sat) 1.8V @ 1A, 5A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 45 @ 2A, 1V
Maximum Power Dissipation 15W
Frequency - Transition 65MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-126
Win Source Part Number 1077409-MJE200TSTU
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 60
Ultra Librarian 3D Model Ultra Librarian MJE200TSTU CAD Model

Description

The Fairchild/ON Semiconductor MJE200TSTU is a NPN transistor with a maximum current collector of 5A and a VCEO maximum collector-emitter breakdown voltage of 25V.

  • Maximum Current Collector: 5A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 25V
  • Mounting Type: Through Hole
  • Case/Package: TO-126
  • Frequency-Transition: 65MHz
  • Typical Gain (hFE) (Min): 45 @ 2A, 1V
  • Maximum Power Dissipation: 15W
  • Collector Cut-Off Current (Max): 100nA (ICBO)
  • Supply and Demand Status: Sufficient
  • Package Quantity: 60

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