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Same model may have multiple batches, images only for reference.
P30N06LE Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

P30N06LE

Part No P30N06LE
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 30A TO-220AB
Datasheet
P30N06LE Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 62nC @ 10V
Max Input Capacitance 1350pF @ 25V
Maximum Gate-Source Voltage +10V, -8V
Power Dissipation (Max) 96W (Tc)
Maximum Rds On at Id,Vgs 47 mOhm @ 30A, 5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 060985-P30N06LE
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian P30N06LE CAD Model

Description

The Fairchild/ON Semiconductor 060985-P30N06LE is a MOSFET transistor that is designed for use in various electronic circuits.

  • Polarity: N-channel.
  • Power Dissipation: Maximum power dissipation of 96W (Tc).
  • Package: TO-220AB case.
  • Drain-Source Breakdown Voltage: 60V.
  • Continuous Drain Current: 30A (Ta) @ 25°C.
  • Gate-Source Threshold Voltage: 2V @ 250μA.
  • Gate Charge: Maximum gate charge is 62nC @ 10V.
  • Input Capacitance: Maximum input capacitance is 1350pF @ 25V.
  • Rds On: Maximum Rds On @ Id, Vgs is 47 mOhm @ 30A, 5V.
  • Category: Discrete semiconductor product.
  • Status: Obsolete (EOL).

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