The QTC4N26 is a silicon N-channel enhancement mode MOSFET from ON Semiconductor (formerly Fairchild Semiconductor). It is designed for high-speed switching applications and offers low on-resistance and gate charge.

Applications

• DC-DC converters
• Power management circuits
• Motor control
• Load switches
• Backlighting inverters
• Synchronous rectification

Features

• Low on-resistance: Minimizes conduction losses, improving efficiency.
• Fast switching speed: Reduces switching losses in high-frequency applications.
• Low gate charge: Reduces gate drive requirements, simplifying driver circuitry.
• High avalanche energy: Provides robustness against voltage transients.
• Lead-free package: Compliant with environmental regulations.
• Surface mount package: Allows for compact designs and easy integration into PCBs.

Benefits

• Improved efficiency: Low on-resistance reduces conduction losses, improving overall system efficiency.
• Reduced power consumption: Fast switching speed and low gate charge minimize switching losses, reducing power consumption.
• Simplified design: Low gate charge simplifies driver circuitry, reducing component count and cost.
• Enhanced reliability: High avalanche energy provides robustness against voltage transients, improving system reliability.
• Environmentally friendly: Lead-free package complies with environmental regulations.
• Compact solution: Surface mount package allows for compact designs and easy integration into PCBs.

Additional Details

The QTC4N26 MOSFET is designed for high-speed switching applications where efficiency and low power consumption are critical. Its low on-resistance minimizes conduction losses, while its fast switching speed and low gate charge reduce switching losses. The device is available in a surface mount package, allowing for compact designs and easy integration into printed circuit boards (PCBs). It is commonly used in DC-DC converters, power management circuits, and motor control applications. Key specifications include a drain-source voltage (VDS) of 250V, a continuous drain current (ID) of 4A, and an on-resistance (RDS(on)) of typically less than 0.8 ohms. The gate threshold voltage is typically between 2V and 4V. The device is typically driven with a gate voltage of 10V. It is RoHS compliant and available in a variety of tape and reel packaging options.