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QTC4N35

Part No QTC4N35
Manufacturer Fairchild/ON Semiconductor
Catalog OEM Parts (O - R)
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 1011085-QTC4N35
Categories OEM Parts(O-R)
Manufacturer Fairchild/ON Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian QTC4N35 CAD Model

Description

The QTC4N35 is a high-CTR (Current Transfer Ratio) phototransistor optocoupler manufactured by Fairchild Semiconductor, now part of ON Semiconductor. This optocoupler provides electrical isolation between input and output circuits, making it ideal for a variety of applications where safety and signal integrity are critical.

Applications

  • Industrial Control Systems: Isolates control signals from power circuits.
  • Power Supplies: Provides feedback isolation in switching power supplies.
  • Motor Control: Isolates microcontroller outputs from motor drive circuits.
  • Digital Logic Input Isolation: Protects sensitive digital circuitry from voltage spikes and noise.
  • Line Receivers: Isolates communication lines to prevent ground loops.

Features

  • High CTR: Offers a high current transfer ratio, ensuring efficient signal transmission.
  • Electrical Isolation: Provides high voltage electrical isolation between input and output.
  • Compact Package: Available in a compact package for space-saving designs.
  • RoHS Compliant: Environmentally friendly and compliant with RoHS standards.
  • High Isolation Voltage: Ensures safety and prevents damage from high voltage transients.

Benefits

  • Enhanced Safety: Electrical isolation protects users and equipment from high voltage hazards.
  • Improved Signal Integrity: Prevents ground loops and noise from affecting signal transmission.
  • Increased System Reliability: Protects sensitive circuits from voltage spikes and transients.
  • Space Saving: Compact package allows for use in space-constrained applications.
  • Design Flexibility: High CTR and electrical isolation offer flexibility in circuit design.

Additional Details

The QTC4N35 consists of a gallium arsenide (GaAs) infrared emitting diode optically coupled to a silicon NPN phototransistor. Key specifications include a collector-emitter voltage (VCEO), collector current (IC), and isolation voltage (VISO). The CTR is typically specified at a particular forward current (IF). The operating temperature range is typically -55°C to +100°C. Further technical details, including specific CTR values and isolation voltage ratings, can be found in the QTC4N35 datasheet from ON Semiconductor.

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