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Same model may have multiple batches, images only for reference.
RFD3055 Real Image
Same model may have multiple batches, images only for reference.

RFD3055

Part No RFD3055
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 12A IPAK / N-Channel 60 V 12A (Tc) 53W (Tc) Through Hole I-PAK
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 150mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 20 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 300 pF @ 25 V
Power Dissipation (Max) 53W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Standard Package 1,567 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 659988-RFD3055
Ultra Librarian 3D Model Ultra Librarian RFD3055 CAD Model

Description

The 659988-RFD3055 is an N-Channel MOSFET transistor used in discrete semiconductor applications. The 659988-RFD3055 is from Fairchild/ON Semiconductor.

  • Channel Type: N-Channel
  • Package: tube
  • Package Quantity: 1,567 pieces
  • Drain to Source Voltage: 60V
  • Continuous Drain Current @ 25°C: 12A
  • On-Resistance @ 12A, 10V: 150mOhm (maximum)
  • Gate Threshold Voltage: 4V
  • Power Dissipation: 53W
  • Mounting: through-hole
  • Package: TO-251-3 Short Leads, IPak

This obsolete product is from Fairchild/ON Semiconductor.

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