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Same model may have multiple batches, images only for reference.
RFD3055SM Real Image
Same model may have multiple batches, images only for reference.

RFD3055SM

Part No RFD3055SM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 12A DPAK
Datasheet
RFD3055SM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 23nC @ 20V
Max Input Capacitance 300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 53W (Tc)
Maximum Rds On at Id,Vgs 150 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1092133-RFD3055SM
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RFD3055SM CAD Model

Description

The RFD3055SM is an N-channel MOSFET transistor with a drain-source breakdown voltage of 60V and a continuous drain current of 12A @ 25°C.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 12A @ 25°C
  • Power Dissipation: 53W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Package: TO-252AA
  • Application: discrete semiconductor products
  • Status: obsolete product, and alternative parts may be used
  • Maximum Rds On: 150 mOhm @ 12A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA

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