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FQD1N60TM

Name: FQD1N60TM
Brand: Fairchild/ON Semiconductor
SKU: 454762
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	FQD1N60TM
Manufacturer	Fairchild/ON Semiconductor
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 600V 1A DPAK
Datasheet	FQD1N60TM Datasheet
Sample
Rohs State
ECAD Module
	Add to BOM List New List Existing List This product has been added to your list. List name
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Fairchild/ON Semiconductor
Packaging	Reel - TR
Status	Obsolete(EOL)
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	600V
Continuous Drain Current at 25°C	1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	5V @ 250μA
Max Gate Charge	6nC @ 10V
Max Input Capacitance	150pF @ 25V
Maximum Gate-Source Voltage	±30V
Power Dissipation (Max)	2.5W (Ta), 30W (Tc)
Maximum Rds On at Id,Vgs	11.5 Ohm @ 500mA, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	D-Pak
Dimension	TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number	1039707-FQD1N60TM
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian FQD1N60TM CAD Model

Alternative Products

Description

The Fairchild/ON Semiconductor FQD1N60TM is an N-channel MOSFET designed for discrete semiconductor applications.

Package: D-Pak
Maximum Power Dissipation: 2.5W (Ta), 30W (Tc)
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current: 1A (Tc) @ 25°C
Temperature Range: -55°C to 150°C (TJ)
Drive Voltage: 10V
Maximum Rds On: 11.5 Ohm @ 500mA, 10V
Status: Obsolete (EOL)
Popularity: Medium

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