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Same model may have multiple batches, images only for reference.
RFG70N06 Real Image
Same model may have multiple batches, images only for reference.

RFG70N06

Part No RFG70N06
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 70A TO-247
Datasheet
RFG70N06 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 156nC @ 20V
Max Input Capacitance 2250pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 70A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247
Dimension TO-247-3
Win Source Part Number 1092143-RFG70N06
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RFG70N06 CAD Model

Description

The Fairchild/ON Semiconductor 436504 is an N-channel MOSFET with a drain-source breakdown voltage of 60V and a continuous drain current of 70A at 25°C.

  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 70A @ 25°C
  • Maximum Power Dissipation: 150W (Tc)
  • Package: TO-247
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On at Id,Vgs: 14 mOhm @ 70A, 10V
  • Maximum Gate Charge: 156nC @ 20V
  • Maximum Input Capacitance: 2250pF @ 25V
  • Category: Discrete Semiconductor Products
  • Lifecycle Status: obsolete (EOL)
  • Popularity: medium
  • Supply and Demand Status: balanced

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