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SS8550BBU

Part No SS8550BBU
Manufacturer Fairchild/ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS PNP 25V 1.5A TO92-3  /  Bipolar (BJT) Transistor PNP 25 V 1.5 A 200MHz 1 W Through Hole TO-92-3
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Fairchild Semiconductor
Package Bulk
Product Status Obsolete
Transistor Type PNP
Current - Collector (Ic) (Max) 1.5 A
Voltage - Collector Emitter Breakdown (Max) 25 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 85 @ 100mA, 1V
Power - Max 1 W
Frequency - Transition 200MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3
ECCN EAR99
HTSUS 8541.29.0075
Other Names 2156-SS8550BBU,FAIFSCSS8550BBU
Standard Package 1
Win Source Part Number 1092040-SS8550BBU
Ultra Librarian 3D Model Ultra Librarian SS8550BBU CAD Model

Description

The Fairchild Semiconductor 1092040-SS8550BBU is a bipolar transistor that belongs to the category of discrete semiconductor products. This PNP transistor has a maximum power of 1 W and a maximum collector-emitter breakdown voltage of 25 V. It has a current gain (hFE) of 85 at 100mA and 1V. The transistor type is PNP, and the frequency transition is 200MHz. The Win Source Part Number is used to identify this component. It is a cross-referenced alternative part that is used in place of the original part. The manufacturer is Fairchild Semiconductor, and it falls under the category of Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single. This component is obsolete.

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