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Same model may have multiple batches, images only for reference.
SI3867DV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3867DV-T1-GE3

Part No SI3867DV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 3.9A 6-TSOP
Datasheet
SI3867DV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 11nC @ 4.5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 51 mOhm @ 5.1A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 1095871-SI3867DV-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI3867DV-T1-GE3 CAD Model

Description

This MOSFET electronic component is manufactured by Vishay and has a part number of 1095871-SI3867DV-T1-GE3.

  • Packaging: Reel
  • Mounting: SMD (SMT)
  • Technology: MOSFET
  • Polarity: P-Channel
  • Maximum Power Dissipation: 1.1W (Ta)
  • Category: Discrete Semiconductor Product
  • Drive Voltage: 2.5V (Max Rds On) and 4.5V (Min Rds On)
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: 6-TSOP
  • Dimensions: SOT-23-6 Thin, TSOT-23-6
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 3.9A (Ta)
  • Gate-Source Threshold Voltage: 1.4V @ 250μA
  • Maximum Gate Charge: 11nC @ 4.5V
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Rds On @ Id, Vgs: 51 mOhm @ 5.1A, 4.5V
  • Supply and Demand Status: Sufficient

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