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Same model may have multiple batches, images only for reference.
2MBI150U4B-120-50
Same model may have multiple batches, images only for reference.

2MBI150U4B-120-50

Part No 2MBI150U4B-120-50
Manufacturer Fuji Electric
Catalog OEM Parts (0 - 9)
Description DUAL IGBT MODULE 150A 1200V TRENCH; Transistor Type: IGBT Module; Transistor Polarity: Trench; Voltage Vces: 1200V;...
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package Module
Collector Emitter Breakdown Voltage 1.2 kV
Collector Emitter Voltage (VCEO) 2.2 V
Element Configuration Dual
Height 30 mm
Isolation Voltage 2.5 kV
Length 92 mm
Max Collector Current 150 A
Maximum Operating Temperature 150 °C
Max Power Dissipation 780 W
Mount Panel
Number of Pins 7
Power Dissipation 780 W
Rise Time 320 ns
RoHS Compliant
Termination Screw
Width 92 mm
Win Source Part Number 1030216-2MBI150U4B-120-50
Categories OEM Parts(0-9)
Manufacturer Fuji Electric
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2MBI150U4B-120-50 CAD Model

Description

The Fuji Electric 1030216-2MBI150U4B-120-50 is a dual element configuration module with a collector-emitter breakdown voltage of 1.2 kV and a collector-emitter voltage of 2.2 V.

  • Maximum Collector Current: 150 A
  • Power Dissipation: 780 W
  • Mounting: panel
  • Termination: screw
  • Height: 30 mm
  • Length: 92 mm
  • Width: 92 mm
  • Maximum Temperature: 150°C
  • Isolation Voltage: 2.5 kV
  • Rise Time: 320 ns
  • Pins: 7
  • RoHS Compliant: yes

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Quantity Unit Price Ext. Price
1+ $81.8181 $81.8181
2+ $67.1328 $134.2656
3+ $65.0349 $195.1047
4+ $62.9370 $251.7480
5+ $60.8391 $304.1955
6+ $54.5454 $327.2724
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