The FMC20N50E-TE24RSC is a high-voltage N-channel power MOSFET from Fuji Electric. This MOSFET is designed for high-efficiency switching applications. Its robust design makes it suitable for demanding power electronics applications.

Applications

• Power factor correction (PFC) circuits
• Uninterruptible power supplies (UPS)
• Switch-mode power supplies (SMPS)
• Motor control circuits
• Inverter applications

Features

• N-channel enhancement mode MOSFET
• High voltage capability (500V)
• Low on-resistance (RDS(on))
• Fast switching speed
• Avalanche ruggedness
• RoHS compliant

Benefits

• Increased energy efficiency due to low RDS(on)
• Reduced power losses in switching applications
• Improved system reliability
• Simplified thermal management due to low heat dissipation
• Compliance with environmental regulations

Additional Details

The FMC20N50E-TE24RSC features a drain-source voltage (VDS) of 500V, a continuous drain current (ID) of 20A, and a pulsed drain current (IDM) of up to 60A. The gate-source voltage (VGS) is rated at ±30V. The MOSFET exhibits a low on-resistance (RDS(on)) of typically 0.29 ohms at VGS = 10V. The total gate charge (Qg) is typically 45 nC. This MOSFET is available in a TO-247 package, which provides excellent thermal performance. The operating junction temperature range is -55°C to +150°C. Its fast switching characteristics make it suitable for high-frequency applications, further enhancing efficiency. Fuji Electric's advanced design and manufacturing processes ensure the high quality and reliability of the FMC20N50E-TE24RSC.