The FMH16N50E is a high-voltage N-channel power MOSFET manufactured by Fuji Electric. This MOSFET is engineered for high-efficiency switching applications, offering a robust solution for power electronics. Its key characteristics include a high breakdown voltage and low on-resistance, making it suitable for a variety of demanding applications.

Applications

• Switch-mode power supplies (SMPS)
• Power factor correction (PFC) circuits
• Uninterruptible power supplies (UPS)
• Motor control
• Inverters

Features

• N-channel enhancement mode
• High voltage capability (500V)
• Low on-resistance (RDS(on))
• Fast switching speed
• Avalanche energy rated
• RoHS compliant

Benefits

• High energy efficiency due to low RDS(on)
• Reduced power losses during switching
• Improved system reliability
• Simplified thermal management
• Compliance with environmental standards

Additional Details

The FMH16N50E features a drain-source voltage (VDS) of 500V, a continuous drain current (ID) of 16A, and a pulsed drain current (IDM) of 48A. The gate-source voltage (VGS) is rated at ±30V. It exhibits a low on-resistance (RDS(on)) of typically 0.29 ohms at VGS = 10V. The total gate charge (Qg) is typically 35 nC. This MOSFET is available in a TO-220F package, providing good thermal performance. The operating junction temperature range is -55°C to +150°C. The fast switching characteristics make it suitable for high-frequency applications, further enhancing efficiency. Fuji Electric's advanced design ensures the high quality and reliability of the FMH16N50E, making it a reliable choice for power electronics applications.