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G3R30MT12J

Part No G3R30MT12J
Manufacturer GeneSiC Semiconductor
Catalog FETs - Single
Description SIC MOSFET N-CH 96A TO263-7
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202236-G3R30MT12J
Manufacturer GeneSiC Semiconductor
Category Discrete Semiconductor Products -Transistors -FETs, MOSFETs- Single FETs, MOSFETs
Series G3R™
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Ultra Librarian 3D Model Ultra Librarian G3R30MT12J CAD Model

Description

The GeneSiC Semiconductor 1202236 is a high-quality N-Channel SiCFET (Silicon Carbide) transistor.

  • Series: G3R™
  • Drain to Source Voltage: 1200V
  • Installation: Surface Mount
  • Operating Temperature Range: -55°C to 175°C
  • Status: Active

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