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G08N06S

Part No G08N06S
Manufacturer Goford Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N60V, RD(MAX)<30M@10V,RD(MAX)<40
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Goford Semiconductor
Series G
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 30mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 979 pF @ 30 V
FET Feature -
Power Dissipation (Max) 2W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOP
Package / Case 8-SOIC (0.154", 3.90mm Width)
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1376814-G08N06S
Ultra Librarian 3D Model Ultra Librarian G08N06S CAD Model

Description

The G08N06S is a N-Channel MOSFET transistor from Goford Semiconductor's G series.

  • Mounting Type: Surface Mount
  • Package/Case: 8-SOIC (0.154", 3.90mm width)
  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 6A @ 25°C
  • On-Resistance (Rds On): 30mOhm @ 3A and 10V
  • Gate Threshold Voltage (Vgs(th)): 2.5V @ 250µA
  • Gate Charge (Qg): 22nC @ 10V
  • Voltage Swing (Vgs): ±20V
  • Input Capacitance (Ciss): 979pF @ 30V
  • Product Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
270+ $0.1856 $50.1120
660+ $0.1523 $100.5180
1,020+ $0.1476 $150.5520
1,405+ $0.1428 $200.6340
1,815+ $0.1381 $250.6515
2,425+ $0.1238 $300.2150
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 540 pieces
MOQ: 270 pcs
Order Increment : 1 pcs
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