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Same model may have multiple batches, images only for reference.
2N6475 Boca Semiconductor Corporation
Same model may have multiple batches, images only for reference.

2N6475

Part No 2N6475
Manufacturer Harris Corporation
Catalog Transistors (BJT) - Single
Description TRANS PNP 100V 4A TO220-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Harris Corporation
Package Bulk
Product Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 4 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 2A, 4A
Current - Collector Cutoff (Max) 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 1.5A, 4V
Power - Max 40 W
Frequency - Transition 4MHz
Temperature Range - Operating -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Standard Package 200 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 541458-2N6475
Ultra Librarian 3D Model Ultra Librarian 2N6475 CAD Model

Description

The 541458-2N6475 is a PNP bipolar transistor designed for general-purpose amplification and switching applications.

  • Power Dissipation: 40W
  • Collector-Emitter Breakdown Voltage (Vceo): 100V
  • Maximum Collector Current (Ic): 4A
  • Saturation Voltage (Vce Saturation): 2.5V @ 2A collector current (Ic) and 4A collector current (Ic)
  • Package: TO-220-3
  • Mounting: Through-hole mounting
  • Applications: Audio amplifiers, voltage regulators, and motor control circuits
  • Status: Active
  • Manufacturer: Harris Corporation

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