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HGTP7N60C3

Part No HGTP7N60C3
Manufacturer Harris Corporation
Catalog IGBTs - Single
Description 14A, 600V, UFS SERIES N-CHANNEL
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Harris Corporation
Package Bulk
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 14 A
Current - Collector Pulsed (Icm) 56 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 7A
Power - Max 60 W
Input Type Standard
Gate Charge 30 nC
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Standard Package 450 pcs
MSL Level 3 (168 Hours)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 597704-HGTP7N60C3
Ultra Librarian 3D Model Ultra Librarian HGTP7N60C3 CAD Model

Description

The HGTP7N60C3 is a single IGBT transistor designed for high-power switching applications.

  • Power Dissipation: 60W
  • Usage: suitable for high-power circuits.
  • Collector-Emitter Breakdown Voltage: 600V
  • Protection: providing protection against voltage spikes.
  • Maximum Collector Current: 14A
  • Pulsed Collector Current: 56A
  • Current Load: can handle high current loads.
  • Collector-Emitter Saturation Voltage: 2V @ 15V and 7A
  • Efficiency: ensuring efficient power transfer.
  • Package: TO-220-3
  • Installation: allowing for easy installation.
  • Temperature Range: -40°C to 150°C
  • Conditions: can withstand a wide range of operating conditions.
  • Overall: high-power IGBT transistor suitable for demanding applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6722 $60.4980
210+ $0.5521 $115.9410
325+ $0.5348 $173.8100
450+ $0.5174 $232.8300
580+ $0.5001 $290.0580
775+ $0.4481 $347.2775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,920 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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