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Same model may have multiple batches, images only for reference.
IRF122 Real Image
Same model may have multiple batches, images only for reference.

IRF122

Part No IRF122
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 25 V
Power Dissipation (Max) 60W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3
Package / Case TO-204AA, TO-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 604190-IRF122
Ultra Librarian 3D Model Ultra Librarian IRF122 CAD Model

Description

The IRF122 is an N-channel MOSFET transistor designed for power management applications.

  • Drain-to-Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id) @ 25°C: 8A
  • On-Resistance (Rds On) @ 5.6A, 10V: 360mOhm
  • Package: TO-204AA, TO-3
  • Gate Charge (Qg) @ 10V: 15nC
  • Input Capacitance (Ciss) @ 25V: 350pF
  • Product Status: Active
  • Manufacturer: Harris Corporation

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