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Same model may have multiple batches, images only for reference.
IRF612 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

IRF612

Part No IRF612
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.4Ohm @ 1.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.2 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 135 pF @ 25 V
Power Dissipation (Max) 43W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 604391-IRF612
Ultra Librarian 3D Model Ultra Librarian IRF612 CAD Model

Description

The 604391-IRF612 is an N-Channel MOSFET transistor used in discrete semiconductor products.

  • Manufacturer: Harris Corporation
  • Product Name: 604391-IRF612
  • Type: N-Channel MOSFET Transistor
  • Application: Discrete Semiconductor Products
  • Drain to Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 2.6A @ 25°C
  • Rds On (Max): 2.4Ohm @ 1.6A and 10V
  • Gate Charge (Qg): 8.2nC @ 10V
  • Input Capacitance (Ciss): 135pF @ 25V
  • Power Dissipation: 43W
  • Package: TO-220-3
  • Mounting Type: Through-Hole
  • Operating Temperature: -55°C to 150°C
  • Status: Active

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