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IRF623

Part No IRF623
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 25 V
Power Dissipation (Max) 40W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Standard Package 737 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 875018-IRF623
Ultra Librarian 3D Model Ultra Librarian IRF623 CAD Model

Description

The 875018-IRF623 is an N-channel MOSFET transistor designed for discrete semiconductor applications.

  • Drain-to-Source Voltage: 150V
  • Continuous Drain Current: 4A
  • On-Resistance: 1.2Ohm @ 2.5A and 10V
  • Maximum Gate-Source Voltage: ±20V
  • Temperature Range: -55°C to 150°C
  • Package: TO-220-3
  • Mounting: Through-hole
  • Manufacturer: Harris Corporation
  • Product Status: Actively Available

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Pricing & Ordering

Quantity Unit Price Ext. Price
255+ $0.1964 $50.0820
625+ $0.1612 $100.7500
965+ $0.1562 $150.7330
1,325+ $0.1511 $200.2075
1,715+ $0.1461 $250.5615
2,295+ $0.1310 $300.6450
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,160 pieces
MOQ: 255 pcs
Order Increment : 1 pcs
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