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IRF632

Name: IRF632
Brand: Harris Corporation
SKU: 1065497
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	IRF632
Manufacturer	Harris Corporation
Catalog	Transistors - FETs, MOSFETs - RF
Description	N-CHANNEL POWER MOSFET / N-Channel 200 V 8A (Tc) 75W (Tc) Through Hole TO-220AB
Sample
Rohs State	Need to verify
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Harris Corporation
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	600mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	600 pF @ 25 V
Power Dissipation (Max)	75W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
RoHS Status	RoHS non-compliant
MSL Level	1 (Unlimited)
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	HARHARIRF632,2156-IRF632
Standard Package	1
Win Source Part Number	1065497-IRF632
Ultra Librarian 3D Model	Ultra Librarian IRF632 CAD Model

Alternative Products

Description

The IRF632 is a N-channel MOSFET transistor that comes in a TO-220AB package.

Channel Type: N-channel
Package: TO-220AB
Drain to Source Voltage (Vdss): 200 V
Continuous Drain Current (Id) @ 25°C: 8A
Maximum On-Resistance (Rds On) @ 5A, 10V: 600mOhm
Gate Charge (Qg) @ 10V: 30 nC
Input Capacitance (Ciss) @ 25 Vds: 600 pF
Operating Temperature Range: -55°C to 150°C
Applications: Power supplies, motor control, and lighting

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
35+	$1.7116	$59.9060
85+	$1.4045	$119.3825
130+	$1.3606	$176.8780
180+	$1.3167	$237.0060
230+	$1.2728	$292.7440
305+	$1.1411	$348.0355

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 5,960 pieces

MOQ: 35 pcs

Order Increment : 1 pcs

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