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Same model may have multiple batches, images only for reference.
IRF9511
Same model may have multiple batches, images only for reference.

IRF9511

Part No IRF9511
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description P-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 180 pF @ 25 V
Power Dissipation (Max) 20W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 875072-IRF9511
Ultra Librarian 3D Model Ultra Librarian IRF9511 CAD Model

Description

The IRF9511 is a P-channel MOSFET transistor manufactured by Harris Corporation. It is designed for use in discrete semiconductor products and offers a drain-to-source voltage of 80V.

  • Drain-to-Source Voltage: 80V
  • Continuous Drain Current: 3A @ 25°C
  • Maximum On-Resistance: 1.2Ohm
  • Package: TO-220-3 package
  • Mounting: Through-hole
  • Gate Charge: 11nC
  • Input Capacitance: 180pF
  • Operating Temperature Range: -55°C to 150°C
  • Status: Active product

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