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IRF9532

Part No IRF9532
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description P-CHANNEL POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 500 pF @ 25 V
Power Dissipation (Max) 75W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 160194-IRF9532
Ultra Librarian 3D Model Ultra Librarian IRF9532 CAD Model

Description

The 160194-IRF9532 is a P-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 10A @ 25°C
  • Rds On (Max): 400mOhm @ 6.5A and 10V
  • Gate Charge (Qg): 45nC @ 10V
  • Input Capacitance (Ciss): 500pF @ 25V
  • Maximum Power Dissipation: 75W
  • Case: TO-220-3
  • Mounting: through-hole
  • Operating Temperature Range: -55°C to 150°C
  • Manufacturer: Harris Corporation
  • Status: active

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $10.7601 $64.5606
14+ $8.8288 $123.6032
21+ $8.5530 $179.6130
28+ $8.2771 $231.7588
37+ $8.0011 $296.0407
49+ $7.1735 $351.5015
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,900 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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