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Same model may have multiple batches, images only for reference.
RF1S22N10SM Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

RF1S22N10SM

Part No RF1S22N10SM
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 22A
Mounting Type Surface Mount
Supplier Device Package TO-263AB
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 659815-RF1S22N10SM
Ultra Librarian 3D Model Ultra Librarian RF1S22N10SM CAD Model

Description

The RF1S22N10SM is a N-Channel MOSFET transistor designed for high power applications.

  • Voltage Rating (Drain-to-Source): 100V
  • Current Rating (Continuous Drain): 22A
  • Mounting Type: Surface Mountable
  • Package: TO-263-3, D²Pak
  • Series: MOSFET
  • Manufacturer: Harris Corporation
  • Suitable for: Power amplifiers, motor control circuits, and other high power applications

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