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Same model may have multiple batches, images only for reference.
RF1S4N100SM9A Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

RF1S4N100SM9A

Part No RF1S4N100SM9A
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 4.3A TO263AB
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 4.3A (Tc)
Rds On (Max) @ Id, Vgs 3.5Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263AB
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 800 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 293223-RF1S4N100SM9A
Ultra Librarian 3D Model Ultra Librarian RF1S4N100SM9A CAD Model

Description

The 293223-RF1S4N100SM9A is a N-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Vdss: 1000V
  • Id: 4.3A @ 25°C
  • Rds On (Max): 3.5Ohm @ 2.5A and 10V
  • Vgs(th): 4V @ 250μA
  • Mounting Type: Surface Mount
  • Package: TO-263-3, D²Pak package
  • Power Dissipation (Max): 150W @ Tc
  • Application: Suitable for power switching applications
  • Manufacturer: Harris Corporation
  • Status: Active product

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0822 $59.5210
135+ $0.8882 $119.9070
205+ $0.8605 $176.4025
280+ $0.8328 $233.1840
360+ $0.8050 $289.8000
480+ $0.7219 $346.5120
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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