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Same model may have multiple batches, images only for reference.
RFD16N02L Intersil Corporation
Same model may have multiple batches, images only for reference.

RFD16N02L

Part No RFD16N02L
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description 16A, 20V, 0.022 OHM, N-CHANNEL L
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 22mOhm @ 16A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 20 V
Power Dissipation (Max) 90W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 659976-RFD16N02L
Ultra Librarian 3D Model Ultra Librarian RFD16N02L CAD Model

Description

The 659976-RFD16N02L is an N-channel MOSFET transistor suitable for various applications.

  • Drain to Source Voltage: 20V
  • Continuous Drain Current: 16A @ 25°C
  • Maximum On-Resistance: 22mΩ @ 16A and 5V gate-source voltage
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Power Dissipation: 90W
  • Package: TO-251-3 Short Leads
  • Mounting: Through-hole
  • Device Package: I-PAK
  • Temperature Range: -55°C to 175°C
  • Manufacturer: Harris Corporation
  • Status: Active

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