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Same model may have multiple batches, images only for reference.
RFD16N05 Real Image
Same model may have multiple batches, images only for reference.

RFD16N05

Part No RFD16N05
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 50V 16A IPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 47mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 20 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 25 V
Power Dissipation (Max) 72W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Standard Package 75 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 659981-RFD16N05
Ultra Librarian 3D Model Ultra Librarian RFD16N05 CAD Model

Description

The 659981-RFD16N05 is an N-channel MOSFET transistor designed for switching applications.

  • Drain-to-source voltage rating: 50V
  • Continuous drain current rating: 16A
  • Maximum on-resistance: 47mOhm @ 16A
  • Gate threshold voltage: 4V
  • Mounting: Through-hole
  • Package: TO-251-3 Short Leads
  • Maximum power dissipation: 72W
  • Gate charge: 80nC @ 20V
  • Status: Obsolete

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