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RFD16N05L

Part No RFD16N05L
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Rds On (Max) @ Id, Vgs 47mOhm @ 16A, 5V
Vgs(th) (Max) @ Id 2V @ 250mA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Vgs (Max) ±10V
Power Dissipation (Max) 60W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251AA
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Standard Package 257 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 659982-RFD16N05L
Ultra Librarian 3D Model Ultra Librarian RFD16N05L CAD Model

Description

The 659982-RFD16N05L is a N-Channel MOSFET transistor designed for various electronic applications.

  • Vdss: 50V
  • Id: 16A @ 25°C
  • Rds On (Max): 47mOhm @ 16A and 5V
  • Vgs(th): 2V @ 250mA
  • Mounting Type: Through-hole
  • Package: TO-251AA
  • Qg: 80nC @ 10V
  • Maximum Vgs: ±10V
  • Temperature Range: -55°C to 150°C
  • Product Status: Active
  • Manufacturer: Harris Corporation

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0095 $60.5700
140+ $0.8281 $115.9340
220+ $0.8027 $176.5940
300+ $0.7762 $232.8600
385+ $0.7508 $289.0580
515+ $0.6734 $346.8010
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,900 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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