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RFP15N12

Name: RFP15N12
Brand: Harris Corporation
SKU: 294080
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	RFP15N12
Manufacturer	Harris Corporation
Catalog	Transistors - FETs, MOSFETs - RF
Description	N-CHANNEL POWER MOSFET
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	Harris Corporation
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	120 V
Current - Continuous Drain (Id) @ 25°C	15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	150mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1700 pF @ 25 V
Power Dissipation (Max)	75W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3
Standard Package	1 pcs
MSL Level	1 (Unlimited)
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	294080-RFP15N12
Ultra Librarian 3D Model	Ultra Librarian RFP15N12 CAD Model

Alternative Products

Description

The 294080-RFP15N12 is a N-Channel MOSFET transistor designed for use in discrete semiconductor products.

Vdss (Drain to Source Voltage): 120V
Id (Continuous Drain Current) @ 25°C: 15A
Rds On (Max): 150mOhm @ 7.5A, 10V
Power Dissipation: 75W
Temperature Range: -55°C to 150°C
Package: TO-220-3
Mounting: Through-Hole
Ciss (Input Capacitance): 1700pF
Maximum Vgs: ±20V
Manufacturer: Harris Corporation

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
5+	$12.3824	$61.9120
12+	$10.1600	$121.9200
18+	$9.8424	$177.1632
25+	$9.5250	$238.1250
32+	$9.2076	$294.6432
42+	$8.2550	$346.7100

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 8,700 pieces

MOQ: 5 pcs

Order Increment : 1 pcs

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