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Same model may have multiple batches, images only for reference.
RFP18N08 Intersil Corporation
Same model may have multiple batches, images only for reference.

RFP18N08

Part No RFP18N08
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL, MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 25 V
Power Dissipation (Max) 75W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 660107-RFP18N08
Ultra Librarian 3D Model Ultra Librarian RFP18N08 CAD Model

Description

The 660107-RFP18N08 is a N-channel MOSFET transistor designed for high power applications.

  • Drain to Source Voltage Rating: 80 V
  • Continuous Drain Current Rating: 18A
  • Maximum On-Resistance: 100mOhm @ a drain current of 9A and a gate-source voltage of 10V
  • Threshold Voltage: 4V
  • Maximum Power Dissipation: 75W
  • Package: TO-220-3 package
  • Mounting: through-hole mounting
  • Manufacturer: Harris Corporation
  • Product Line: active
  • Common Use: power amplifiers, motor control circuits, and other high power applications

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