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Same model may have multiple batches, images only for reference.
IPS110N12N3GBKMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPS110N12N3GBKMA1

Part No IPS110N12N3GBKMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 120V 75A TO251-3
Datasheet
IPS110N12N3GBKMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 120V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 83μA
Max Gate Charge 65nC @ 10V
Max Input Capacitance 4310pF @ 60V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 136W (Tc)
Maximum Rds On at Id,Vgs 11 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO251-3
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 1046079-IPS110N12N3GBKMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPS110N12N3GBKMA1 CAD Model

Description

The Infineon Technologies IPS110N12N3GBKMA1 is a N-channel MOSFET that is designed for high power applications.

  • Power Dissipation: 136W (Tc)
  • Continuous Drain Current: 75A (Tc) @ 25°C
  • Drain-Source Breakdown Voltage: 120V
  • Gate-Source Threshold Voltage: 4V @ 83μA
  • Rds On: 11 mOhm @ 75A, 10V
  • Package: PG-TO251-3
  • Temperature Range: -55°C to 175°C (TJ)
  • Supply and Demand Status: balanced

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