The 2SC2463 is a silicon NPN epitaxial planar transistor produced by Hitachi, Ltd. It's designed for use in various high-frequency amplifier applications. This transistor is characterized by its high gain and low noise figure, making it suitable for sensitive receiver circuits and preamplifiers. Its structure ensures reliable performance and consistent characteristics.

Applications

• High-frequency amplifiers
• Oscillators
• Mixers
• RF front-ends
• Communication equipment

Features

• NPN Silicon Epitaxial Planar Transistor
• High gain (hFE)
• Low noise figure
• High transition frequency (fT)
• Small signal amplification

Benefits

• Improved signal amplification in RF circuits
• Reduced noise in sensitive receivers
• Enhanced performance of high-frequency oscillators
• Reliable operation in demanding environments
• Increased system sensitivity and range

Additional Details

The 2SC2463 transistor is typically housed in a small signal package. Key electrical characteristics include a collector-emitter voltage (VCEO) of approximately 25V, a collector current (IC) rating around 50mA, and a power dissipation (PC) of about 200mW. The transition frequency (fT) is typically in the hundreds of MHz, allowing for effective amplification at higher frequencies. The DC current gain (hFE) is typically specified at a particular collector current and voltage, and this parameter is important for determining the transistor's amplification capabilities in a circuit.

When designing with the 2SC2463, it is crucial to consider the biasing conditions to ensure optimal performance and stability. Proper heat sinking may be required, especially when operating at higher power levels. Careful attention to impedance matching is also essential to maximize gain and minimize signal reflections in high-frequency applications.