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3SK82

Part No 3SK82
Manufacturer Hitachi, Ltd
Catalog Custom Parts (0 - A)
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Rohs State Need to verify
ECAD Module
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Win Source Part Number 1186190-3SK82
Categories Custom Parts
Manufacturer Hitachi, Ltd
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 3SK82 CAD Model

Description

The 3SK82 is an N-channel silicon dual gate MOSFET manufactured by Hitachi. It's designed for high-frequency amplifier and mixer applications, often found in radio frequency (RF) circuits, television tuners, and communication equipment. The dual-gate configuration provides enhanced control over gain and noise performance, making it a valuable component for sensitive signal processing.

Applications:

  • RF Amplifiers: Used as a low-noise amplifier (LNA) in RF receiver front-ends to boost weak signals.
  • Mixers: Employed in frequency mixers to convert signals from one frequency to another.
  • Television Tuners: Found in TV tuners for signal amplification and frequency conversion.
  • Communication Equipment: Utilized in radio communication devices for signal processing and amplification.
  • Oscillators: Used in oscillator circuits for generating stable high-frequency signals.

Features:

  • N-Channel MOSFET: Provides efficient amplification and switching capabilities.
  • Dual-Gate Configuration: Allows for enhanced gain control and noise reduction.
  • High Gain: Offers high voltage gain for amplifying weak signals.
  • Low Noise Figure: Minimizes noise contribution in sensitive receiver circuits.
  • High Frequency Operation: Suitable for high-frequency applications.

Benefits:

  • Improved Signal Sensitivity: Enhances the ability to detect weak signals in RF receivers.
  • Reduced Noise: Minimizes noise interference for cleaner signal processing.
  • Enhanced Gain Control: Allows for precise adjustment of signal amplification.
  • Stable Performance: Provides stable and reliable performance in demanding RF applications.
  • Versatile Application: Suitable for a wide range of high-frequency amplifier and mixer circuits.

Additional Details:

The 3SK82 typically has a high forward transconductance (gfs) value, contributing to its high gain. The dual-gate structure allows for independent control of the drain current, enabling optimized performance for different applications. While specific values depend on the operating conditions, the 3SK82 generally operates with drain voltages in the range of 10-20V and drain currents of a few milliamperes. Detailed electrical characteristics, such as noise figure and gain, should be verified using the official Hitachi datasheet.

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