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HY628400ALG-70DR

Part No HY628400ALG-70DR
Manufacturer Hynix Semiconductor
Catalog SRAM
Description SRAM 512Kx8-70 SOP
Sample
Rohs State rohs
ECAD Module
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Categories Memory
Win Source Part Number 957365-HY628400ALG-70DR
Series *
Ultra Librarian 3D Model Ultra Librarian HY628400ALG-70DR CAD Model

Description

The HY628400ALG-70DR is a high-performance, low-power CMOS Static RAM (SRAM) manufactured by Hynix Semiconductor. This SRAM is organized as 524,288 words by 8 bits, providing a total memory capacity of 4 megabits. It is designed for applications where fast access times and minimal power consumption are critical, making it suitable for use in portable devices, embedded systems, and other memory-intensive applications.

Applications

  • Portable communication devices: Including mobile phones and wireless communication equipment.
  • Embedded systems: Such as industrial control systems and automotive electronics.
  • Cache memory: For microprocessors and digital signal processors (DSPs).
  • Data storage: In medical devices and instrumentation.
  • Buffer memory: In networking equipment and data acquisition systems.

Features

  • Fast access time: 70ns access time ensures quick data retrieval, improving system performance.
  • Low power consumption: CMOS technology minimizes power usage, extending battery life in portable devices.
  • Single 5V power supply: Simplifies power management in system designs.
  • Fully static operation: No clock or refresh required, reducing system complexity and power consumption.
  • Tri-state outputs: Allows for easy memory expansion and bus sharing.
  • Data retention capability: Ensures data integrity during power-down modes.
  • Operating temperature range: Suitable for commercial and industrial temperature environments.
  • Available in various package options: Including DIP and SOJ packages for flexible integration.

Benefits

  • Enhanced system performance: High-speed access time minimizes latency and enhances overall system responsiveness.
  • Extended battery life: Low power consumption is ideal for battery-powered devices.
  • Simplified system design: Fully static operation eliminates the need for complex refresh circuitry.
  • Improved data reliability: Data retention capabilities ensure data integrity.
  • Cost-effective memory solution: Provides a balance of performance, power efficiency, and cost.

Additional Details

The HY628400ALG-70DR utilizes advanced CMOS technology to achieve high-speed performance and low power consumption. Its fully static operation simplifies system integration by eliminating the need for external clocks or refresh cycles. The SRAM is available in various package options, catering to diverse application requirements. The device also features tri-state outputs, which allow for easy memory expansion and seamless integration into bus-oriented architectures. Its wide operating temperature range ensures reliable performance in diverse environmental conditions. The HY628400ALG-70DR is designed for reliable data storage and retrieval, making it a suitable choice for applications requiring high performance and low power consumption. This SRAM provides an efficient and dependable memory solution for a wide range of electronic devices and systems.

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