The IDT71V416S12PHGI is a high-speed, low-power synchronous Static RAM (SRAM) device. This particular SRAM is designed for applications requiring fast access times and moderate memory density. As a synchronous SRAM, it relies on a clock signal to control data transfers, which allows for predictable and efficient operation within high-performance systems.

Applications

• High-speed cache memory
• Networking equipment (routers, switches)
• Digital signal processing (DSP) systems
• High-performance computing
• Data acquisition systems

Features

• High-speed access time: 12ns
• Synchronous operation: Clocked read and write cycles
• Single 3.3V power supply: Simplifies power supply design
• Low power consumption: Ideal for portable or energy-sensitive applications
• Byte write enable: Allows for selective writing to specific bytes within the memory array
• Available in a TQFP package: Enables high-density board mounting

Benefits

• Increased system performance: Fast access times reduce latency in critical applications
• Simplified system design: Single power supply reduces component count and design complexity
• Reduced power consumption: Extends battery life in portable devices and lowers overall system power consumption
• Flexible memory access: Byte write enable provides fine-grained control over memory updates
• Compact footprint: TQFP package allows for integration into space-constrained systems

Additional Details

The IDT71V416S12PHGI operates from a 3.3V power supply and features TTL-compatible inputs and outputs. Its synchronous operation ensures reliable data transfers in high-speed systems. The device incorporates byte write enable functionality, allowing for individual byte-level control during write operations. The TQFP (Thin Quad Flat Pack) package provides a compact footprint for high-density board layouts. This SRAM is particularly suitable for applications where speed, power efficiency, and density are critical design considerations.