The BDT42C is a silicon NPN power bipolar transistor manufactured by Inchange Semiconductor Company Limited. It is designed for use in medium power linear and switching applications. The transistor is encased in a TO-220 type package and offers good ruggedness.

Applications

• General purpose switching
• Amplifier circuits
• Linear regulators
• Power supplies
• Motor control

Features

• NPN Silicon Epitaxial Transistor
• High Collector Current (IC = 6A)
• High Collector-Emitter Voltage (VCEO = 100V)
• Low Saturation Voltage
• TO-220 Package

Benefits

• Suitable for medium power applications due to its high current and voltage ratings.
• Efficient switching performance.
• Easy to mount and use due to the TO-220 package.
• Reliable operation.
• Cost effective solution for many applications.

Additional Details

The BDT42C has a continuous collector current (IC) rating of 6A and a peak collector current of 10A. The collector-emitter voltage (VCEO) is rated at 100V. The power dissipation is rated at 40W. The operating and storage junction temperature range is -65°C to +150°C. The DC current gain (hFE) typically ranges from 15 to 75 at a collector current of 3A. The transistor is designed for through-hole mounting.