The 35N60CFD is a CoolMOS™ CFD7 superjunction MOSFET from Infineon Technologies. It is designed for high-efficiency, high-power density applications. This MOSFET combines fast switching performance with low on-state resistance, resulting in reduced power losses and improved system efficiency.

Applications:

• Lighting (LED, HID)
• Industrial power supplies
• Solar inverters
• Welding equipment
• Uninterruptible power supplies (UPS)

Features:

• 600V CoolMOS™ CFD7 technology
• Fast body diode
• Low on-state resistance (RDS(on))
• Reduced switching losses
• Easy to use/drive
• Qualified according to JEDEC for target applications

Benefits:

• High efficiency reduces energy consumption and heat generation.
• Increased power density enables smaller and lighter designs.
• Robust performance in demanding applications.
• Simplified design due to fast body diode.
• Improved system reliability

Technical Specifications:

Transistor Type: N-Channel

Drain-Source Voltage (VDS): 600 V

Gate-Source Voltage (VGS): ±20 V

Continuous Drain Current (ID): 35 A

On-State Resistance (RDS(on)): 0.085 Ohms @ VGS=10V

Gate Threshold Voltage (VGS(th)): 3 V

Total Gate Charge (Qg): 65 nC

Operating Temperature Range: -55°C to +150°C

Package: TO-220 FullPAK