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Same model may have multiple batches, images only for reference.
AIMW120R035M1HXKSA1 Real Image
Same model may have multiple batches, images only for reference.

AIMW120R035M1HXKSA1

Part No AIMW120R035M1HXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description 1200V COOLSIC MOSFET PG-TO247-3
Datasheet
AIMW120R035M1HXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number 2000750-AIMW120R035M1HXKSA1
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 46mOhm @ 25A, 18V
Vgs(th) (Max) @ Id 5.7V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 59 nC @ 18 V
Vgs (Max) +23V, -7V
Input Capacitance (Ciss) (Max) @ Vds 2130 pF @ 800 V
Power Dissipation (Max) 228W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-41
Package / Case TO-247-3
Win Source Part Number Cross
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products
Packaging Tube
Operating Temperature Range -55°C ~ 175°C (TJ)
Ultra Librarian 3D Model Ultra Librarian AIMW120R035M1HXKSA1 CAD Model

Description

This Infineon Technologies product is a discrete semiconductor device that comes packaged in a tube. Infineon Technologies

  • Operating Temperature: -55°C to 175°C (TJ)
  • Alternative Parts: Available for cross-reference
  • Category: Discrete semiconductor products
  • Expected Performance: Well in various applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $48.2683 $96.5366
3+ $39.6047 $118.8141
4+ $38.3671 $153.4684
6+ $37.1294 $222.7764
7+ $35.8918 $251.2426
10+ $32.1789 $321.7890
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 50 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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