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Same model may have multiple batches, images only for reference.
AUIRF1010EZS Real Image
Same model may have multiple batches, images only for reference.

AUIRF1010EZS

Part No AUIRF1010EZS
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description AUIRF1010 - 55V-60V N-CHANNEL AU
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8.5mOhm @ 51A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2810 pF @ 25 V
Power Dissipation (Max) 140W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 240 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 567076-AUIRF1010EZS
Ultra Librarian 3D Model Ultra Librarian AUIRF1010EZS CAD Model

Description

The AUIRF1010EZS is a N-Channel MOSFET transistor from Infineon Technologies.

  • Series: HEXFET
  • Voltage (Vdss): 60V
  • Current (Id) @ 25°C: 75A
  • Rds On @ Id, Vgs: 8.5mOhm @ 51A, 10V
  • Power Dissipation: 140W
  • Mounting Type: Surface Mount
  • Package: TO-263-3, D²Pak
  • Gate Charge (Qg) @ Vgs: 86nC @ 10V
  • Input Capacitance (Ciss) @ Vds: 2810pF @ 25V
  • Operating Temperature: -55°C to 175°C

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