AUIRF1010EZSTRL

Part No AUIRF1010EZSTRL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 75A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 86nC @ 10V
Max Input Capacitance 2810pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 51A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1020694-AUIRF1010EZSTRL
Popularity Medium
Supply and Demand Status Sufficient

Description

The Infineon Technologies IFRF1010EZSTRL is an N-channel MOSFET with a drain-source breakdown voltage of 60V and a continuous drain current of 75A. It has a maximum power dissipation of 140W and a maximum Rds On of 8.5 mOhm at 51A and 10V. The gate-source threshold voltage is 4V at 250μA, and the maximum gate charge is 86nC at 10V. This MOSFET is in the D2PAK package with dimensions of TO-263-3, D2Pak (2 Leads + Tab), TO-263AB. It is suitable for use in discrete semiconductor products.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
30+ $1.6860 $50.5800
75+ $1.3840 $103.8000
115+ $1.3410 $154.2150
155+ $1.2970 $201.0350
200+ $1.2540 $250.8000
270+ $1.1240 $303.4800
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 103,500 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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