The Infineon Technologies IFRF1010EZSTRL is an N-channel MOSFET with a drain-source breakdown voltage of 60V and a continuous drain current of 75A. It has a maximum power dissipation of 140W and a maximum Rds On of 8.5 mOhm at 51A and 10V. The gate-source threshold voltage is 4V at 250μA, and the maximum gate charge is 86nC at 10V. This MOSFET is in the D2PAK package with dimensions of TO-263-3, D2Pak (2 Leads + Tab), TO-263AB. It is suitable for use in discrete semiconductor products.